VTB Process Photodiodes
VTB8440B, 8441B
PACKAGE DIMENSIONS
inch (mm)
CASE 21F 8 mm CERAMIC
CHIP ACTIVE AREA: .008 in
2
(5.16 mm
2
)
PRODUCT DESCRIPTION
Planar silicon photodiode in recessed ceramic
package. The package incorporates an infrared
rejection filter. These diodes have very high
shunt resistance and have good blue response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-20°C to 75°C
-20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
(See also VTB curves, pages 21-22)
VTB8440B
SYMBOL
I
SC
TC I
SC
V
OC
TC V
OC
I
D
R
SH
TC R
SH
C
J
λ
range
λ
p
V
BR
θ
1/2
NEP
D*
CHARACTERISTIC
Short Circuit Current
I
SC
Temperature Coefficient
Open Circuit Voltage
V
OC
Temperature Coefficient
Dark Current
Shunt Resistance
R
SH
Temperature Coefficient
Junction Capacitance
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
2
TEST CONDITIONS
Min.
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 2.0 V
H = 0, V = 10 mV
H = 0, V = 10 mV
H = 0, V = 0
330
580
40
±50
1.1 x 10
-13
(Typ.)
12
(Typ.)
VTB8441B
UNITS
Max.
.08
Min.
4
Typ.
5
.02
420
-2.0
2000
100
1.4
-8.0
1.0
720
330
580
2
40
±50
2.4 x 10
-14
(Typ.)
9.7 x 10
12
(Typ.)
Typ.
5
.02
420
-2.0
.07
-8.0
1.0
Max.
µA
.08
%/°C
mV
mV/°C
pA
GΩ
%/°C
nF
720
nm
nm
V
Degrees
W
⁄
Hz
cm Hz / W
4
2.2 x 10
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
42
PERKINELMER [ PERKINELMER OPTOELECTRONICS ]
