VTP Process Photodiodes
VTP4085, 4085S
PACKAGE DIMENSIONS
inch (mm)
CASE 13 CERAMIC
CHIP ACTIVE AREA: .032 in
2
(21 mm
2
)
PRODUCT DESCRIPTION
Large area planar silicon mounted on a two lead
ceramic substrate and coated with a layer of
clear epoxy. Low junction capacitance permits
fast response time.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-20°C to 75°C
-20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
(See also VTP curves, page 46)
VTP4085
SYMBOL
I
SC
TC I
SC
I
SC
V
OC
TC V
OC
I
D
R
SH
TC R
SH
C
J
λ
range
λ
p
S
R
CHARACTERISTIC
Short Circuit Current
I
SC
Temperature Coefficient
Short Circuit Current
Open Circuit Voltage
V
OC
Temperature Coefficient
Dark Current
Shunt Resistance
R
SH
Temperature Coefficient
Junction Capacitance
Spectral Application Range
Spectral Response - Peak
Sensitivity
@ Peak
TEST CONDITIONS
Min.
H = 100 fc, 2850
2850 K
100 µW/cm
2
, 940 nm
H = 100 fc, 2850 K
2850 K
H = 0, VR = 100 V
H = 0, V = 10 mV
H = 0, V = 10 mV
H = 0, V = 0 V
400
925
.55
2.0
-11
.35
1100
400
925
.55
11.4
Typ.
200
.20
15
.33
-2.0
100
11.4
Max.
Min.
Typ.
200
.20
15
.33
-2.0
15
4.0
-11
.35
1100
50
Max.
µA
%/°C
µA
mV
mV/°C
nA
MΩ
%/°C
nF
nm
nm
A/W
VTP4085S
UNITS
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
55
PERKINELMER [ PERKINELMER OPTOELECTRONICS ]
