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VTT1116 参数 Datasheet PDF下载

VTT1116图片预览
型号: VTT1116
PDF下载: 下载PDF文件 查看货源
内容描述: .050 NPN光电晶体管 [.050 NPN Phototransistors]
分类和应用: 晶体光电晶体管光电晶体管
文件页数/大小: 1 页 / 26 K
品牌: PERKINELMER [ PERKINELMER OPTOELECTRONICS ]
   
.050" NPN Phototransistors
TO-46 Lensed Package
VTT1115, 16, 17
PACKAGE DIMENSIONS
inch (mm)
CASE 3
TO-46 HERMETIC (LENSED)
CHIP TYPE: 50T
PRODUCT DESCRIPTION
A large area high sensitivity NPN silicon phototransistor in
a lensed, hermetically sealed, TO-46 package. The
hermetic package offers superior protection from hostile
environments The base connection is brought out
allowing conventional transistor biasing. These devices
are spectrally matched to the VTE11xx series of IREDs.
ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted)
Maximum Temperatures
Storage Temperature:
Operating Temperature:
Continuous Power Dissipation:
Derate above 30°C:
Maximum Current:
Lead Soldering Temperature:
(1.6 mm from case, 5 sec. max.)
-40°C to 110°C
-40°C to 110°C
250 mW
3.12 mW/°C
200 mA
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
(See also typical curves, pages 91-92)
Light Current
l
C
mA
Min.
VTT1115
VTT1116
VTT1117
1.0
2.0
4.0
Max.
H
fc (mW/cm
2
)
V
CE
= 5.0 V
20 (1)
20 (1)
20 (1)
Dark Current
l
CEO
H=0
(nA)
Max.
100
100
100
V
CE
(Volts)
10
10
10
Collector
Breakdown
V
BR(CEO)
l
C
= 100 µA
H=0
Volts, Min.
30
30
30
Emitter
Breakdown
V
BR(ECO)
l
E
= 100 µA
H=0
Volts, Min.
6.0
4.0
4.0
Saturation
Voltage
V
CE(SAT)
l
C
= 1.0 mA
H = 400 fc
Volts, Max.
0.40
0.40
0.40
Rise/Fall Time
t
R
/t
F
l
C
= 1.0 mA
R
L
= 100
µsec, Typ.
5.0
8.0
8.0
Typ.
±15°
±15°
±15°
Angular
Response
θ
1/2
Part Number
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
103