.040" NPN Phototransistors
Clear T-1¾ (5 mm) Plastic Package
VTT1212, 1214
PACKAGE DIMENSIONS
inch (mm)
CASE 26 T-1 ¾ (5 mm)
CHIP TYPE: 40T
PRODUCT DESCRIPTION
A medium area high speed NPN silicon phototransistor
possessing excellent sensitivity and good speed mounted
in a lensed, end looking, transparent plastic package.
These devices are spectrally and mechanically matched
to the VTE12xx series of IREDs.
ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted)
Maximum Temperatures
Storage Temperature:
Operating Temperature:
Continuous Power Dissipation:
Derate above 30°C:
Maximum Current:
Lead Soldering Temperature:
(1.6 mm from case, 5 sec. max.)
-40°C to 100°C
-40°C to 100°C
50 mW
0.71 mW/°C
25 mA
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
(See also typical curves, pages (91-92)
Light Current
l
C
mA
Min.
VTT1212
VTT1214
2.0
4.0
Max.
—
—
H
fc (mW/cm
2
)
V
CE
= 5.0 V
20 (1)
20 (1)
Dark Current
l
CEO
H=0
(nA)
Max.
100
100
V
CE
(Volts)
10
10
Collector
Breakdown
V
BR(CEO)
l
C
= 100 µA
H=0
Volts, Min.
30
30
Emitter
Breakdown
V
BR(ECO)
l
E
= 100 µA
H=0
Volts, Min.
5.0
5.0
Saturation
Voltage
V
CE(SAT)
l
C
= 1.0 mA
H = 400 fc
Volts, Max.
0.25
0.25
Rise/Fall Time
t
R
/t
F
l
C
= 1.0 mA
R
L
= 100
Ω
µsec, Typ.
4.0
6.0
Angular
Response
θ
1/2
Part Number
Typ.
±10°
±10°
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
99
PERKINELMER [ PERKINELMER OPTOELECTRONICS ]
