HIGH VOLTAGE SILICON RECTIFIER
1N4148
FEATURES
Silicon
Epitaxial Planar Diode
Fast
switching diode
This
diode is also available in other
case styles including: the SOD-123
case with the type designation
1N4448W, the MiniMELF case with the
type designation LL4448, and the SOT23
case with the type designation
MECHANICAL DATA
Case:
DO-35
Weight:
apprax: 0.13gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings
at 25 ambient temperature unless otherwise specified
Symbol
Reverse Voltage
Peak Reverse Voltage
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at T
amb
= 25 °C and f
≥
50 Hz
Surge Forward Current at t < 1 s and T
j
= 25 °C
Power Dissipation at T
amb
= 25 °C
Junction Temperature
Storage Temperature Range
1)
Value
75
100
150
1)
Unit
V
V
mA
V
R
V
RM
I
0
I
FSM
P
tot
T
j
T
S
500
500
1)
175
–65 to +175
mA
mW
°C
°C
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35)
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PFS [ SHENZHEN PING SHENG ELECTRONICS CO., LTD. ]
