Philips Semiconductors
Product specification
Rectifiers
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
V
F(AV)
I
R
I
R(AV)
PARAMETER
forward voltage
full-cycle average forward voltage
reverse current
full-cycle average reverse current
I
F(AV)
= 1 A
V
R
= V
Rmax
V
R
= V
Rmax
; T
amb
= 100
°C
1N4001G to 1N4007G
CONDITIONS
I
F
= 1 A; see Fig.3
MAX.
1.1
0.8
10
50
30
V
V
UNIT
µA
µA
µA
V
R
= V
RRMmax
; T
amb
= 75
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm,
see Fig.4.
For more information please refer to the
“General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
VALUE
46
100
UNIT
K/W
K/W
1996 May 24
3
PHILIPS [ NXP SEMICONDUCTORS ]
