Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
IRFP460
Drain current, ID (A)
30
VDS > ID X RDS(ON)
25
20
15
10
5
0
0
1
2
3
4
5
6
VGS(TO) / V
PHW20N50E
4
max.
3
typ.
150 C
min.
Tj = 25 C
2
1
7
8
0
-60
-40
-20
0
20
40
60
Tj / C
80
100
120
140
Gate-source voltage, VGS (V)
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); parameter T
j
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 0.25 mA; V
DS
= V
GS
ID / A
SUB-THRESHOLD CONDUCTION
20
18
16
14
12
10
8
6
4
2
0
Transconductance, gfs (S)
VDS > ID X RDS(ON)
Tj = 25 C
PHW20N50E
1E-01
1E-02
150 C
1E-03
2%
typ
98 %
1E-04
1E-05
0
5
10
15
20
25
30
1E-06
0
1
2
VGS / V
3
4
Drain current, ID (A)
Fig.8. Typical transconductance.
g
fs
= f(I
D
); parameter T
j
a
Normalised RDS(ON) = f(Tj)
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 ˚C; V
DS
= V
GS
Capacitances, Ciss, Coss, Crss (pF)
PHW20N50E
2
10000
Ciss
1
1000
Coss
Crss
0
-60
-40
-20
0
20
40 60
Tj / C
80
100 120 140
100
0.1
1
10
Drain-Source Voltage, VDS (V)
100
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
); I
D
= 10 A; V
GS
= 10 V
Fig.12. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
September 1999
4
Rev 1.000
PHILIPS [ NXP SEMICONDUCTORS ]
