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PM29F002B-90PC 参数 Datasheet PDF下载

PM29F002B-90PC图片预览
型号: PM29F002B-90PC
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位( 256K ×8 ), 5.0伏的CMOS只闪存 [2 Megabit (256K X 8) 5.0 Volt-only CMOS Flash Memory]
分类和应用: 闪存
文件页数/大小: 21 页 / 118 K
品牌: PMC [ PMC-SIERRA, INC ]
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Pm29F002  
PMC  
DEVICE OPERATION (CONTINUED)  
BYTE PROGRAMMING  
I/O7 DATA# POLLING  
The programming is a four-bus-cycle operation  
and the data is programmed into the device (to a logical  
0) on a byte-by-byte basis. Please see Software Com-  
mand Definition in Table 4. A program operation is ac-  
tivated by writing the three-byte command sequence  
followed by one byte of data into the device. The ad-  
dress are latched on the falling edge of WE# or CE#  
whichever occurs later, and the data is latched on the  
rising edge of WE# or CE#, whichever occurs first. The  
internal control logic automatically handles the internal  
programming voltages and timing.  
The Pm29F002 provides Data# Polling feature to  
indicate the process or the completion of a program or  
erase cycle. During a program cycle, an attempt to read  
the device will result in the complement of the last loaded  
data on I/O7. Once the program cycle is completed,  
the true data of the last loaded data is valid on all out-  
puts. During a block or chip erase operation, an attempt  
to read the device will result a 0on I/O7. After the  
erase cycle is completed, an attempt to read the device  
will result a 1on I/O7.  
A data 0can not be programmed back to a 1.  
Only erase operation can convert 0s to 1s. The Data#  
Polling of I/O7 or Toggle Bit of I/O6 can be used to de-  
tect when the programming operation is completed.  
I/O6 TOGGLE BIT  
The Pm29F002 also provides Toggle Bit feature  
as a method to detect the process or the end of a pro-  
gram or erase cycle. During a program or erase opera-  
tion, an attempt to read data from the device will result  
in I/O6 toggling between 1and 0. When the program  
or erase operation is complete, I/O6 will stop toggling  
and valid data will be read. Toggle bit may be accessed  
at any time during a program or erase cycle.  
CHIP ERASE  
The entire memory array can be erased through  
a chip erase operation. Pre-programs the device is not  
required prior to chip erase operation. Chip erase starts  
after a six-bus-cycle chip erase command sequence.  
All commands will be ignored once the chip erase  
operation has started. The device will return back to  
read mode after the completion of chip erase. When  
the boot block lockout feature is enabled, the boot block  
will not be erased during a chip erase operation. Only  
the parameter blocks and the main blocks will be erased.  
HARDWARE DATA PROTECTION  
Hardware data protection protects the device from  
unintentional erase or program operation. It is performed  
in the following ways: (a) VCC sense: if VCC is below 3.8  
V (typical), the program function is inhibited. (b) Write  
inhibit: holding any of the signal OE# low, CE# high or  
WE# high inhibits a write cycle. (c) Noise filter: pulses  
of less than 20 ns (typical) on the WE# or CE# inputs  
will not initiate a write cycle.  
BLOCK ERASE  
The memory array is organized into five blocks:  
one 16 Kbytes boot block, two 8 Kbytes parameter  
blocks, one 96 Kbytes and one 128 Kbytes main blocks.  
A block erase operation allows to erase any individual  
block. Pre-programs the block is not required prior to  
block erase operation. If the boot block lockout feature  
is enable, the block erase command attempts to erase  
the boot block will be ignored. The block erase com-  
mand is similar to chip erase command except for the  
last bus cycle command where the block addresses  
are used to select the block for erasure and the input  
data to the I/Os is 30h. Each block erase operation  
erases one block. Block erase and chip erase are both  
internally controlled and timed.  
Issue Date: March, 2001 Rev: 1.0  
Programmable Microelectronics Corp.  
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