BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
JUNE 1973 - REVISED MARCH 1997
q
Designed for Complementary Use with the
BD540 Series
45 W at 25°C Case Temperature
5 A Continuous Collector Current
Up to 120 V V
CEO
rating
B
C
E
TO-220 PACKAGE
(TOP VIEW)
q
q
q
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
BD539
BD539A
Collector-base voltage
BD539B
BD539C
BD539D
BD539
BD539A
Collector-emitter voltage (see Note 1)
BD539B
BD539C
BD539D
Emitter-base voltage
Continuous collector current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
V
EBO
I
C
P
tot
P
tot
T
A
T
j
T
stg
T
L
V
CEO
V
CBO
SYMBOL
VALUE
40
60
80
100
120
40
60
80
100
120
5
5
45
2
-65 to +150
-65 to +150
-65 to +150
260
V
A
W
W
°C
°C
°C
°C
V
V
UNIT
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
POINN [ POWER INNOVATIONS LTD ]
