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BD544B 参数 Datasheet PDF下载

BD544B图片预览
型号: BD544B
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅功率晶体管 [PNP SILICON POWER TRANSISTORS]
分类和应用: 晶体晶体管
文件页数/大小: 6 页 / 88 K
品牌: POINN [ POWER INNOVATIONS LTD ]
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BD544, BD544A, BD544B, BD544C
PNP SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
JUNE 1973 - REVISED MARCH 1997
q
Designed for Complementary Use with the
BD543 Series
70 W at 25°C Case Temperature
8 A Continuous Collector Current
10 A Peak Collector Current
Customer-Specified Selections Available
B
C
E
q
q
q
q
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
BD544
Collector-base voltage (I
E
= 0)
BD544A
BD544B
BD544C
BD544
Collector-emitter voltage (I
B
= 0)
BD544A
BD544B
BD544C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. This value applies for t
p
0.3 ms, duty cycle
10%.
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
V
EBO
I
C
I
CM
P
tot
P
tot
T
A
T
j
T
stg
T
L
V
CEO
V
CBO
SYMBOL
VALUE
-40
-60
-80
-100
-40
-60
-80
-100
-5
-8
-10
70
2
-65 to +150
-65 to +150
-65 to +150
260
V
A
A
W
W
°C
°C
°C
°C
V
V
UNIT
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1