BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK
MAY 1993 - REVISED MARCH 1997
q
Designed for Complementary Use with
BD646, BD648, BD650 and BD652
62.5 W at 25°C Case Temperature
8 A Continuous Collector Current
Minimum h
FE
of 750 at 3 V, 3 A
B
C
E
q
q
q
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
BD645
Collector-base voltage (I
E
= 0)
BD647
BD649
BD651
BD645
Collector-emitter voltage (I
B
= 0)
BD647
BD649
BD651
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
�½LI
C
T
j
T
stg
T
L
2
SYMBOL
VALUE
80
100
120
140
60
80
100
120
5
8
12
0.3
62.5
2
50
-65 to +150
-65 to +150
260
UNIT
V
CBO
V
V
CEO
V
V
A
A
A
W
W
mJ
°C
°C
°C
This value applies for t
p
≤
0.3 ms, duty cycle
≤
10%.
Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 5 mA, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= 20 V.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
POINN [ POWER INNOVATIONS LTD ]
