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BD745A 参数 Datasheet PDF下载

BD745A图片预览
型号: BD745A
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅功率晶体管 [NPN SILICON POWER TRANSISTORS]
分类和应用: 晶体晶体管
文件页数/大小: 6 页 / 95 K
品牌: POINN [ POWER INNOVATIONS LTD ]
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BD745, BD745A, BD745B, BD745C
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BD745
V
(BR)CEO
I
C
= 30 mA
I
B
= 0
(see Note 5)
BD745A
BD745B
BD745C
V
CE
= 50 V
V
CE
= 70 V
V
CE
= 90 V
I
CBO
Collector cut-off
current
V
CE
= 110 V
V
CE
= 50 V
V
CE
= 70 V
V
CE
= 90 V
V
CE
= 110 V
I
CEO
I
EBO
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
V
CE
= 30 V
V
CE
= 60 V
V
EB
=
V
CE
=
V
CE
=
V
CE
=
I
B
=
I
B
=
V
CE
=
V
CE
=
5V
4V
4V
4V
0.5 A
5A
4V
4V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
I
C
= 0
I
C
= 1 A
I
C
= 5 A
I
C
= 20 A
I
C
= 5 A
I
C
= 20 A
I
C
= 5 A
I
C
= 20 A
I
C
= 1 A
I
C
= 1 A
(see Notes 5 and 6)
(see Notes 5 and 6)
f = 1 kHz
f = 1 MHz
25
5
(see Notes 5 and 6)
40
20
5
1
3
1
3
V
V
150
T
C
= 125°C
T
C
= 125°C
T
C
= 125°C
T
C
= 125°C
BD745
BD745A
BD745B
BD745C
BD745
BD745A
BD745B
BD745C
BD745/745A
BD745B/745C
MIN
45
60
80
100
0.1
0.1
0.1
0.1
5
5
5
5
0.1
0.1
0.5
mA
mA
mA
V
TYP
MAX
UNIT
h
FE
V
CE(sat)
V
BE
h
fe
V
CE
= 10 V
V
CE
= 10 V
|
h
fe
|
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1.1
35.7
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
d
t
r
t
s
t
f
TEST CONDITIONS
I
C
= 5 A
V
BE(off)
= -4.2 V
I
B(on)
= 0.5 A
R
L
= 6
MIN
I
B(off)
= -0.5 A
t
p
= 20 µs, dc
2%
TYP
20
350
500
400
MAX
UNIT
ns
ns
ns
ns
Delay time
Rise time
Storage time
Fall time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
INFORMATION
2