BDT60, BDT60A, BDT60B, BDT60C
PNP SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK
AUGUST 1993 - REVISED MARCH 1997
q
Designed for Complementary Use with
BDT61, BDT61A, BDT61B and BDT61C
50 W at 25°C Case Temperature
4 A Continuous Collector Current
Minimum h
FE
of 750 at 1.5 V, 3 A
B
C
E
q
q
q
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
BDT60
Collector-base voltage (I
E
= 0)
BDT60A
BDT60B
BDT60C
BDT60
Collector-emitter voltage (I
B
= 0)
BDT60A
BDT60B
BDT60C
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating junction temperature range
Storage temperature range
Operating free-air temperature range
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
V
EBO
I
C
I
B
P
tot
P
tot
T
j
T
stg
T
A
V
CEO
V
CBO
SYMBOL
VALUE
-60
-80
-100
-120
-60
-80
-100
-120
-5
-4
-0.1
50
2
-65 to +150
-65 to +150
-65 to +150
V
A
A
W
W
°C
°C
°C
V
V
UNIT
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1