BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK
JUNE 1993 - REVISED MARCH 1997
q
Designed for Complementary Use with
BDV65, BDV65A, BDV65B and BDV65C
125 W at 25°C Case Temperature
12 A Continuous Collector Current
Minimum h
FE
of 1000 at 4 V, 5 A
C
B
SOT-93 PACKAGE
(TOP VIEW)
1
q
q
q
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
BDV64
Collector-base voltage (I
E
= 0)
BDV64A
BDV64B
BDV64C
BDV64
Collector-emitter voltage (I
B
= 0)
BDV64A
BDV64B
BDV64C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. This value applies for t
p
≤
0.1 ms, duty cycle
≤
10%
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
T
j
T
stg
T
L
V
CEO
V
CBO
SYMBOL
VALUE
-60
-80
-100
-120
-60
-80
-100
-120
-5
-12
-15
-0.5
125
3.5
-65 to +150
-65 to +150
260
V
A
A
A
W
W
°C
°C
°C
V
V
UNIT
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
POINN [ POWER INNOVATIONS LTD ]
