BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
JUNE 1993 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
70000
TCS140AD
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
2·0
t
p
= 300 µs, duty cycle < 2%
I
B
= I
C
/ 100
1·5
TCS140AE
h
FE
- Typical DC Current Gain
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
10000
1·0
1000
0·5
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
0
0·5
1·0
I
C
- Collector Current - A
10
20
V
CE
= 4 V
t
p
= 300 µs, duty cycle < 2%
100
0·5
1·0
I
C
- Collector Current - A
10
20
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
3·0
V
BE(sat)
- Base-Emitter Saturation Voltage - V
T
C
= -40°C
T
C
= 25°C
2·5 T
C
= 100°C
TCS140AF
2·0
1·5
1·0
0·5
I
B
= I
C
/ 100
t
p
= 300 µs, duty cycle < 2%
1·0
I
C
- Collector Current - A
10
20
0
0·5
Figure 3.
PRODUCT
INFORMATION
3
POINN [ POWER INNOVATIONS LTD ]
