BDW24, BDW24A, BDW24B, BDW24C
PNP SILICON POWER DARLINGTONS
MAY 1989 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BDW24
V
(BR)CEO
I
C
= -100 mA
I
B
= 0
(see Note 3)
BDW24A
BDW24B
BDW24C
V
CE
= -30 V
I
CEO
Collector-emitter
cut-off current
V
CE
= -30 V
V
CE
= -40 V
V
CE
= -50 V
V
CB
= -45 V
I
CBO
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
I
EBO
V
EB
=
V
CE
=
V
CE
=
V
CE
=
I
B
=
-5 V
-3 V
-3 V
-3 V
-8 mA
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
C
= 0
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
I
B
= 0
-1 A
-2 A
-6 A
-2 A
-6 A
-2 A
-1 A
-6 A
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
1000
750
100
-2
-3
-2.5
-2.5
-3
-1.8
V
V
V
V
20000
BDW24
BDW24A
BDW24B
BDW24C
BDW24
BDW24A
BDW24B
BDW24C
MIN
-45
-60
-80
-100
-0.5
-0.5
-0.5
-0.5
-0.2
-0.2
-0.2
-0.2
-2
mA
mA
mA
V
TYP
MAX
UNIT
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
V
EC
I
B
= -60 mA
I
B
=
V
CE
=
V
CE
=
I
E
=
-8 mA
-3 V
-3 V
-2 A
NOTES: 3. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
2.5
62.5
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= -3 A
V
BE(off)
= 4.5 V
I
B(on)
= -12 mA
R
L
= 10
Ω
†
MIN
I
B(off)
= 12 mA
t
p
= 20
µs,
dc
≤
2%
TYP
1
5
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
INFORMATION
2
POINN [ POWER INNOVATIONS LTD ]
