BDW63, BDW63A, BDW63B, BDW63C, BDW63D
NPN SILICON POWER DARLINGTONS
Copyright © 1997 Power Innovations Limited, UK
AUGUST 1978 - REVISED MARCH 1997
q
Designed for Complementary Use with
BDW64, BDW64A, BDW64B, BDW64C and
BDW64D
60 W at 25°C Case Temperature
B
TO-220 PACKAGE
(TOP VIEW)
q
q
q
1
2
3
6 A Continuous Collector Current
Minimum h
FE
of 750 at 3 V, 2 A
C
E
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
BDW63
BDW63A
Collector-base voltage (I
E
= 0)
BDW63B
BDW63C
BDW63D
BDW63
BDW63A
Collector-emitter voltage (I
B
= 0) (see Note 1)
BDW63B
BDW63C
BDW63D
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
NOTES: 1.
2.
3.
4.
V
EB
I
C
I
B
P
tot
P
tot
�½LI
C
2
T
j
T
stg
T
A
V
CEO
V
CBO
SYMBOL
VALUE
45
60
80
100
120
45
60
80
100
120
5
6
0.1
60
2
50
-65 to +150
-65 to +150
-65 to +150
V
A
A
W
W
mJ
°C
°C
°C
V
V
UNIT
These values apply when the base-emitter diode is open circuited.
Derate linearly to 150°C case temperature at the rate of 0.48 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 5 mA, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= 20 V.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
POINN [ POWER INNOVATIONS LTD ]
