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BDW84C 参数 Datasheet PDF下载

BDW84C图片预览
型号: BDW84C
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅功率DARLINGTONS [PNP SILICON POWER DARLINGTONS]
分类和应用: 晶体晶体管放大器局域网
文件页数/大小: 6 页 / 158 K
品牌: POINN [ POWER INNOVATIONS LTD ]
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BDW84, BDW84A, BDW84B, BDW84C, BDW84D
PNP SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
BDW84
V
(BR)CEO
Collector-emitter
breakdown voltage
BDW84A
I
C
= -30 mA
I
B
= 0
(see Note 5)
BDW84B
BDW84C
BDW84D
V
CE
= -30 V
I
CEO
Collector-emitter
cut-off current
V
CE
= -30 V
V
CE
= -40 V
V
CE
= -50 V
V
CE
= -60 V
V
CB
= -45 V
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
I
CBO
Collector cut-off
current
V
CB
= -120 V
V
CB
= -45 V
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
V
CB
= -120 V
I
EBO
h
FE
V
BE(on)
V
CE(sat)
V
EC
Emitter cut-off
current
Forward current
transfer ratio
Base-emitter
voltage
Collector-emitter
saturation voltage
Parallel diode
forward voltage
V
EB
=
V
CE
=
V
CE
=
V
CE
=
I
B
=
-5 V
-3 V
-3 V
-3 V
-12 mA
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
C
= 0
I
C
= -6 A
I
C
= -15 A
I
C
= -6 A
I
C
= -6 A
I
C
= -15 A
I
B
= 0
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
750
100
-2.5
-2.5
-4
-3.5
V
V
V
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
MIN
-45
-60
-80
-100
-120
-1
-1
-1
-1
-1
-0.5
-0.5
-0.5
-0.5
-0.5
-5
-5
-5
-5
-5
-2
20000
mA
mA
mA
V
TYP
MAX
UNIT
I
B
= -150 mA
I
E
=
-15 A
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
0.83
35.7
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
TEST CONDITIONS
I
C
= -10 A
V
BE(off)
= 4.2 V
I
B(on)
= -40 mA
R
L
= 3
MIN
I
B(off)
= 40 mA
t
p
= 20
µs,
dc
2%
TYP
0.9
7
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
INFORMATION
2