BU426, BU426A
NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
AUGUST 1978 - REVISED MARCH 1997
q
q
Rugged Triple-Diffused Planar Construction
900 Volt Blocking Capability
B
SOT-93 PACKAGE
(TOP VIEW)
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Peak base current (see Note 1)
Continuous device dissipation at (or below) 50°C case temperature
Operating junction temperature range
Storage temperature range
NOTE
1: This value applies for t
p
≤
2 ms, duty cycle
≤
2%.
BU426
BU426A
BU426
BU426A
BU426
BU426A
SYMBOL
V
CBO
V
CES
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
VALUE
800
900
800
900
375
400
6
10
+2, -0.1
±3
70
-65 to +150
-65 to +150
UNIT
V
V
V
A
A
A
A
W
°C
°C
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
POINN [ POWER INNOVATIONS LTD ]
