欢迎访问ic37.com |
会员登录 免费注册
发布采购

BULD125KC 参数 Datasheet PDF下载

BULD125KC图片预览
型号: BULD125KC
PDF下载: 下载PDF文件 查看货源
内容描述: 带集成二极管NPN硅晶体管 [NPN SILICON TRANSISTOR WITH INTEGRATED DIODE]
分类和应用: 晶体二极管晶体管开关局域网
文件页数/大小: 8 页 / 170 K
品牌: POINN [ POWER INNOVATIONS LTD ]
 浏览型号BULD125KC的Datasheet PDF文件第2页浏览型号BULD125KC的Datasheet PDF文件第3页浏览型号BULD125KC的Datasheet PDF文件第4页浏览型号BULD125KC的Datasheet PDF文件第5页浏览型号BULD125KC的Datasheet PDF文件第6页浏览型号BULD125KC的Datasheet PDF文件第7页浏览型号BULD125KC的Datasheet PDF文件第8页  
BULD125KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
Copyright © 1997, Power Innovations Limited, UK
MAY 1994 - REVISED SEPTEMBER 1997
q
Designed Specifically for High Frequency
Electronic Ballasts
Integrated Fast t
rr
Anti-Parallel Diode,
Enhancing Reliability
Diode t
rr
Typically 1 µs
Tightly Controlled Transistor Storage Times
Voltage Matched Integrated Transistor and
Diode
Characteristics Optimised for Cool Running
Diode-Transistor Charge Coupling
Minimised to Enhance Frequency Stability
B
C
E
TO-220 PACKAGE
(TOP VIEW)
q
1
2
3
q
q
q
Pin 2 is in electrical contact with the mounting base.
MDTRACA
q
q
device symbol
C
description
The new BULDxx range of transistors have been
designed specifically for use in High Frequency
Electronic Ballasts (HFEB’s). This range of
switching transistors has tightly controlled
storage times and an integrated fast t
rr
anti-
parallel diode. The revolutionary design ensures
that the diode has both fast forward and reverse
recovery times, achieving the same performance
as a discrete anti-parallel diode plus transistor.
The integrated diode has minimal charge
coupling with the transistor, increasing frequency
stability, especially in lower power circuits where
the circulating currents are low. By design, this
new device offers a voltage matched integrated
transistor and anti-parallel diode.
B
E
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-emitter voltage (V
BE
= 0)
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Peak base current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature
Maximum average continuous diode forward current at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE
1: This value applies for t
p
=
10 ms, duty cycle
2%.
SYMBOL
V
CES
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
I
E(av)
T
j
T
stg
VALUE
600
600
400
9
8
12
4
6
85
0.5
-65 to +150
-65 to +150
UNIT
V
V
V
V
A
A
A
A
W
A
°C
°C
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1