BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
JULY 1994 - REVISED SEPTEMBER 1997
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION JUNCTION TO AMBIENT
vs
POWER PULSE DURATION
100
0%
P
tot
- Maximum Power Dissipation - W
LDX25DPA
BULD25D
T
A
= 25°C
10 10%
20%
40%
60%
1·0
0·1
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t1 - Power Pulse Duration - s
Figure 10.
MAXIMUM POWER DISSIPATION JUNCTION TO AMBIENT
vs
POWER PULSE DURATION
100
0%
P
tot
- Maximum Power Dissipation - W
LDX25SPA
BULD25SL
T
A
= 25°C
10%
10
20%
40%
60%
1·0
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t1 - Power Pulse Duration - s
Figure 11.
PRODUCT
INFORMATION
6