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TIC201M 参数 Datasheet PDF下载

TIC201M图片预览
型号: TIC201M
PDF下载: 下载PDF文件 查看货源
内容描述: 硅双向可控硅 [SILICON TRIACS]
分类和应用: 可控硅三端双向交流开关局域网
文件页数/大小: 4 页 / 71 K
品牌: POINN [ POWER INNOVATIONS LTD ]
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TIC201 SERIES
SILICON TRIACS
Copyright © 1997, Power Innovations Limited, UK
JANUARY 1977 - REVISED MARCH 1997
q
q
q
q
q
Sensitive Gate Triacs
2.5 A RMS
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max I
GT
of 5 mA (Quadrant 1)
MT1
MT2
G
1
2
3
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
absolute maximum ratings
over operating case temperature (unless otherwise noted)
RATING
TIC201D
Repetitive peak off-state voltage (see Note 1)
TIC201M
TIC201S
TIC201N
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave (see Note 3)
Peak on-state surge current half-sine-wave (see Note 4)
Peak gate current
Peak gate power dissipation at (or below) 85°C case temperature (pulse width
200
µs)
Average gate power dissipation at (or below) 85°C case temperature (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
I
T(RMS)
I
TSM
I
TSM
I
GM
P
GM
P
G(AV)
T
C
T
stg
T
L
V
DRM
SYMBOL
VALUE
400
600
700
800
2.5
12
14
±0.2
1.3
0.3
-40 to +110
-40 to +125
230
A
A
A
A
W
W
°C
°C
°C
V
UNIT
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 100 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
I
DRM
Repetitive peak
off-state current
Peak gate trigger
current
V
D
= rated V
DRM
V
supply
= +12 V†
I
GTM
V
supply
= +12 V†
V
supply
= -12 V†
V
supply
= -12 V†
V
supply
= +12 V†
V
GTM
Peak gate trigger
voltage
V
supply
= +12 V†
V
supply
= -12 V†
V
supply
= -12 V†
† All voltages are with respect to Main Terminal 1.
TEST CONDITIONS
I
G
= 0
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
T
C
= 110°C
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
0.9
-1.2
-1.2
1.2
MIN
TYP
MAX
±1
5
-8
-10
25
2.5
-2.5
-2.5
V
mA
UNIT
mA
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1