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TIC236 参数 Datasheet PDF下载

TIC236图片预览
型号: TIC236
PDF下载: 下载PDF文件 查看货源
内容描述: 硅双向可控硅 [SILICON TRIACS]
分类和应用: 可控硅三端双向交流开关
文件页数/大小: 5 页 / 108 K
品牌: POINN [ POWER INNOVATIONS LTD ]
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TIC236 SERIES
SILICON TRIACS
Copyright © 2000, Power Innovations Limited, UK
DECEMBER 1971 - REVISED JUNE 2000
G
G
G
G
G
High Current Triacs
12 A RMS
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max I
GT
of 50 mA (Quadrants 1 - 3)
MT1
MT2
G
1
2
3
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
TIC236D
Repetitive peak off-state voltage (see Note 1)
TIC236M
TIC236S
TIC236N
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)
Peak gate current
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
I
T(RMS)
I
TSM
I
GM
T
C
T
stg
T
L
V
DRM
SYMBOL
VALUE
400
600
700
800
12
100
±1
-40 to +110
-40 to +125
230
A
A
A
°C
°C
°C
V
UNIT
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
the rate of 300 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
I
DRM
Repetitive peak
off-state current
Gate trigger
current
V
D
= Rated V
DRM
V
supply
= +12 V†
I
GT
V
supply
= +12 V†
V
supply
= -12 V†
V
supply
= -12 V†
V
supply
= +12 V†
V
GT
Gate trigger
voltage
On-state voltage
Holding current
V
supply
= +12 V†
V
supply
= -12 V†
V
supply
= -12 V†
V
T
I
H
I
TM
= ±17 A
V
supply
= +12 V†
V
supply
= -12 V†
TEST CONDITIONS
I
G
= 0
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
I
G
= 50 mA
I
G
= 0
I
G
= 0
T
C
= 110°C
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
(see Note 4)
Init’ I
TM
= 100 mA
Init’ I
TM
= -100 mA
12
-19
-16
34
0.8
-0.8
-0.8
0.9
±1.4
22
-12
2
-2
-2
2
±2.1
40
-40
V
mA
V
MIN
TYP
MAX
±2
50
-50
-50
mA
UNIT
mA
† All voltages are with respect to Main Terminal 1.
NOTE 4: This parameter must be measured using pulse techniques, t
p
=
1 ms, duty cycle
2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1