TIC236 SERIES
SILICON TRIACS
DECEMBER 1971 - REVISED JUNE 2000
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
supply = +12 V†
80
IL
Latching current
(see Note 5)
mA
Vsupply = -12 V†
-80
Critical rate of rise of
off-state voltage
dv/dt
dv/dt(c)
di/dt
VD = Rated VD
IG = 0
TC = 110°C
C = 80°C
400
9
V/µs
V/µs
A/µs
Critical rise of
VD = Rated VD
T
1.2
commutation voltage
Critical rate of rise of
on -state current
di/dt = 0.5 IT(RMS)/ms
VD = Rated VD
IT = 1.4 IT(RMS)
IGT = 50 mA
TC = 110°C
100
diG/dt = 50 mA/ms
† All voltages are with respect to Main Terminal 1.
NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
RG = 100 W, tp(g) = 20 ms, tr = £ 15 ns, f = 1 kHz.
thermal characteristics
PARAMETER
Junction to case thermal resistance
MIN
TYP
MAX
2
UNIT
°C/W
°C/W
RqJC
RqJA
Junction to free air thermal resistance
62.5
TYPICAL CHARACTERISTICS
GATE TRIGGER VOLTAGE
vs
GATE TRIGGER CURRENT
vs
CASE TEMPERATURE
CASE TEMPERATURE
TC08AB
TC08AA
10
1000
100
10
1
Vsupply IGTM
Vsupply IGTM
1
VAA = ± 12 V
RL = 10 W
VAA = ± 12 V
+
+
+
+
-
+
-
-
+
-
-
-
RL = 10 W
}
tp(g) = 20 µs
tp(g) = 20 µs
-
+
-
+
0·1
0·1
-60 -40 -20
0
20
40
60
80 100 120
-60 -40 -20
0
20
40
60
80 100 120
TC - Case Temperature - °C
TC - Case Temperature - °C
Figure 1.
Figure 2.
P R O D U C T
I N F O R M A T I O N
2
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