TIC266 SERIES
SILICON TRIACS
JULY 1991 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
MIN
TYP
MAX
PARAMETER
TEST CONDITIONS
UNIT
V
supply = +12 V†
20
IL
Latching current
(see Note 5)
mA
Vsupply = -12 V†
-20
Critical rate of rise of
off-state voltage
dv/dt
dv/dt(c)
di/dt
VD = Rated VD
IG = 0
TC = 110°C
C = 80°C
±450
±1
V/µs
V/µs
A/µs
Critical rise of
VD = Rated VD
T
commutation voltage
Critical rate of rise of
on -state current
di/dt = 0.5 IT(RMS)/ms
VD = Rated VD
IT = 1.4 IT(RMS)
IGT = 50 mA
TC = 110°C
±200
diG/dt = 50 mA/ms
† All voltages are with respect to Main Terminal 1.
NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
RG = 100 W, tp(g) = 20 ms, tr = £ 15 ns, f = 1 kHz.
thermal characteristics
PARAMETER
Junction to case thermal resistance
MIN
TYP
MAX
1.52
62.5
UNIT
°C/W
°C/W
RqJC
RqJA
Junction to free air thermal resistance
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
GATE TRIGGER VOLTAGE
vs
CASE TEMPERATURE
CASE TEMPERATURE
TC10AA
TC10AB
1000
100
10
0·1
ALL QUADRANTS
0·01
Vsupply IGTM
1
VAA = ± 12 V
RL = 10 W
VAA = ± 12 V
+
+
-
+
-
-
RL = 10 W
tp(g) = 20 µs
tp(g) = 20 µs
-
+
0·1
0·001
-60 -40 -20
0
20
40
60
80 100 120
-60 -40 -20
0
20
40
60
80 100 120
TC - Case Temperature - °C
TC - Case Temperature - °C
Figure 1.
Figure 2.
P R O D U C T
I N F O R M A T I O N
2
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