TICP106 SERIES
SILICON CONTROLLED RECTIFIERS
MARCH 1988 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
I
DRM
I
RRM
I
GT
V
GT
I
H
V
TM
NOTE
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
Gate trigger voltage
Holding current
Peak on-state
voltage
V
D
= rated V
DRM
V
R
= rated V
RRM
V
AA
= 6 V
V
AA
= 6 V
V
AA
= 6 V
I
TM
= 1 A
TEST CONDITIONS
R
GK
= 1 kΩ
I
G
= 0
R
L
= 100
Ω
R
L
= 100
Ω
R
GK
= 1 kΩ
R
GK
= 1 kΩ
(see Note 5)
t
p(g)
≥
20
µs
t
p(g)
≥
20 µs
Initiating I
T
= 10 mA
0.4
60
MIN
TYP
MAX
20
200
200
1
5
1.5
UNIT
µA
µA
µA
V
mA
V
5: This parameter must be measured using pulse techniques, t
p
= 1 ms, duty cycle
≤
2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
PRODUCT
INFORMATION
2
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