TICP206 SERIES
SILICON TRIACS
Copyright © 1997, Power Innovations Limited, UK
MARCH 1988 - REVISED MARCH 1997
q
q
q
q
q
1.5 A RMS
Glass Passivated Wafer
G
LP PACKAGE
(TOP VIEW)
1
2
3
400 V to 600 V Off-State Voltage
Max I
GT
of 10 mA
Package Options
PACKAGE
LP
LP with fomed leads
PACKING
Bulk
Tape and Reel
PART # SUFFIX
(None)
R
MT2
MT1
MDC2AA
LP PACKAGE
WITH FORMED LEADS
(TOP VIEW)
G
MT2
MT1
MDC2AB
1
2
3
absolute maximum ratings
over operating case temperature (unless otherwise noted)
RATING
Repetitive peak off-state voltage (see Note 1)
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave (see Note 3)
Peak on-state surge current half-sine-wave (see Note 4)
Peak gate current
Average gate power dissipation at (or below) 85°C case temperature (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
TICP206D
TICP206M
SYMBOL
V
DRM
I
T(RMS)
I
TSM
I
TSM
I
GM
P
G(AV)
T
C
T
stg
T
L
VALUE
400
600
1.5
10
12
±0.2
0.3
-40 to +110
-40 to +125
230
UNIT
V
A
A
A
A
W
°C
°C
°C
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 60 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
I
DRM
Repetitive peak off-
state current
Peak gate trigger
current
V
D
= rated V
DRM
V
supply
= +12 V†
I
GTM
V
supply
= +12 V†
V
supply
= -12 V†
V
supply
= -12 V†
V
supply
= +12 V†
V
GTM
Peak gate trigger
voltage
V
supply
= +12 V†
V
supply
= -12 V†
V
supply
= -12 V†
† All voltages are with respect to Main Terminal 1.
TEST CONDITIONS
I
G
= 0
R
L
= 10
Ω
R
L
= 10
Ω
R
L
= 10
Ω
R
L
= 10
Ω
R
L
= 10
Ω
R
L
= 10
Ω
R
L
= 10
Ω
R
L
= 10
Ω
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
MIN
TYP
MAX
±20
8
-8
-8
10
2.5
-2.5
-2.5
2.5
V
mA
UNIT
µA
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
POINN [ POWER INNOVATIONS LTD ]
