TIP105, TIP106, TIP107
PNP SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
V
(BR)CEO
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
I
C
= -30 mA
(see Note 5)
V
CE
= -30 V
V
CE
= -40 V
V
CE
= -50 V
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
V
EB
=
V
CE
=
V
CE
=
I
B
=
I
B
=
V
CE
=
I
E
=
-5 V
-4 V
-4 V
-6 mA
-80 mA
-4 V
-8 A
I
B
= 0
I
B
= 0
I
B
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
C
= 0
I
C
= -3 A
I
C
= -8 A
I
C
= -3 A
I
C
= -8 A
I
C
= -8 A
I
B
= 0
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
1000
200
-2
-2.5
-2.8
-3.5
V
V
V
TEST CONDITIONS
TIP105
I
B
= 0
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
MIN
-60
-80
-100
-50
-50
-50
-50
-50
-50
-8
20000
mA
µA
µA
V
TYP
MAX
UNIT
I
CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
V
EC
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θ
JC
R
θ
JA
C
θ
C
Junction to case thermal resistance
Junction to free air thermal resistance
Thermal capacitance of case
0.9
MIN
TYP
MAX
1.56
62.5
UNIT
°C/W
°C/W
J/°C
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
d
t
r
t
s
t
f
†
TEST CONDITIONS
I
C
= -8 A
V
BE(off)
= 5 V
I
B(on)
= -80 mA
R
L
= 5
Ω
†
MIN
I
B(off)
= 80 mA
t
p
= 20 µs, dc
≤
2%
TYP
35
300
900
1.3
MAX
UNIT
ns
ns
ns
µs
Delay time
Rise time
Storage time
Fall time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
INFORMATION
2
POINN [ POWER INNOVATIONS LTD ]
