TIPL770
NPN SILICON POWER TRANSISTOR
Copyright © 1997, Power Innovations Limited, UK
MARCH 1984 - REVISED MARCH 1997
q
q
q
Rugged Triple-Diffused Planar Construction
2.5 A Continuous Collector Current
Operating Characteristics Fully Guaranteed
at 100°C
850 Volt Blocking Capability
50 W at 25°C Case Temperature
TO-220 PACKAGE
(TOP VIEW)
B
C
E
1
2
3
q
q
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE
1: This value applies for t
p
≤
10 ms, duty cycle
≤
2%.
SYMBOL
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
T
stg
VALUE
850
850
400
10
2.5
8
50
-65 to +150
-65 to +150
UNIT
V
V
V
V
A
A
W
°C
°C
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
POINN [ POWER INNOVATIONS LTD ]
