TIPP110, TIPP111, TIPP112
NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK
MAY 1989 - REVISED MARCH 1997
q
q
q
q
20 W Pulsed Power Dissipation
100 V Capability
2 A Continuous Collector Current
4 A Peak Collector Current
E
C
B
LP PACKAGE
(TOP VIEW)
1
2
3
MDTRAB
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
TIPP110
Collector-base voltage (I
E
= 0)
TIPP111
TIPP112
TIPP110
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Pulsed power dissipation (see Note 3)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. This value applies for t
p
≤
0.3 ms, duty cycle
≤
10%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. V
CE
= 20 V, I
C
= 1 A, P
W
= 10 ms, duty cycle
≤
2%.
TIPP111
TIPP112
V
EBO
I
C
I
CM
I
B
P
tot
P
T
T
j
T
stg
T
L
V
CEO
V
CBO
SYMBOL
VALUE
60
80
100
60
80
100
5
2
4
50
0.8
20
-55 to +150
-55 to +150
260
V
A
A
mA
W
W
°C
°C
°C
V
V
UNIT
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
POINN [ POWER INNOVATIONS LTD ]
