TIPP32, TIPP32A,TIPP32B, TIPP32C
PNP SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TIPP32
-40
-60
Collector-emitter
TIPP32A
TIPP32B
TIPP32C
TIPP32
V(BR)CEO
IC
=
-5 mA
IB = 0
V
breakdown voltage
-80
(see Note 4)
-100
VCE
VCE
VCE
=
=
=
-40 V
-60 V
-80 V
V
BE = 0
-0.2
-0.2
-0.2
-0.2
-0.3
-0.3
Collector-emitter
cut-off current
VBE = 0
VBE = 0
VBE = 0
TIPP32A
TIPP32B
TIPP32C
TIPP32/32A
TIPP32B/32C
ICES
mA
VCE = -100 V
Collector cut-off
current
VCE
VCE
=
=
-30 V
-60 V
IB = 0
ICEO
IEBO
hFE
mA
mA
IB = 0
Emitter cut-off
current
VEB
=
-5 V
IC = 0
-1
Forward current
transfer ratio
VCE
VCE
=
=
-4 V
-4 V
IC
IC
=
=
-1 A
-2 A
20
10
(see Notes 4 and 5)
(see Notes 4 and 5)
(see Notes 4 and 5)
f = 1 kHz
Collector-emitter
saturation voltage
Base-emitter
VCE(sat)
VBE
IB = -375 mA
IC
IC
=
=
-2 A
-2 A
-1
V
V
VCE
VCE
VCE
=
=
=
-4 V
-10 V
-10 V
-1.5
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
hfe
IC = -0.5 A
IC = -0.5 A
20
3
|hfe|
f = 1 MHz
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle £ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
P R O D U C T
I N F O R M A T I O N
2
POINN [ POWER INNOVATIONS LTD ]
