TISP1072F3, TISP1082F3
DUAL ASYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
SEPTEMBER 1993 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
R and T terminals
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
100
V
D
= ±50 V
TC1LAN
BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
90.0
I
(BR)
= 1 mA
V
(BO)
TC1LAM
10
I
D
- Off-State Current - µA
Breakdown Vo tages - V
80.0
'1082F3
V
(BR)M
1
V
(BR)
0·1
V
(BO)
70.0
'1072F3
V
(BR)M
V
(BR)
0·01
0·001
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
60.0
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
Figure 14.
Figure 15.
HOLDING CURRENT & BREAKOVER CURRENT
vs
JUNCTION TEMPERATURE
I
H
, I
(BO)
- Holding Current, Breakover Current - A
1·0
0·9
0·8
0·7
0·6
0·5
0·4
0·3
I
H
0·2
I
(BO)
TC1LAO
NORMALISED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
2.0
1.9
Normalised Breakover Voltage
1.8
1.7
1.6
1.5
1.4
1.3
1.2
TC1LAI
0·1
0·09
0·08
0·07
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
1.1
1.0
0·001
0·01
0·1
1
10
100
di/dt - Rate of Rise of Principle Current - A/µs
Figure 16.
Figure 17.
PRODUCT
INFORMATION
8
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