TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
electrical characteristics for the T and R terminals, T
J
= 25 °C (unless otherwise noted)
PARAMETER
I
DRM
Repetitive peak off-
state current
TEST CONDITIONS
V
D
= ±V
DRM
, 0 °C < T
J
< 70 °C
‘4072
‘4082
‘4125
‘4150
V
(BO)
Breakover voltage
dv/dt = ±250 V/ms,
R
SOURCE
= 300
Ω
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
‘4072
‘4082
‘4125
‘4150
V
(BO)
Impulse breakover
voltage
dv/dt = ±1000 V/µs,
di/dt < 20 A/µs
R
SOURCE
= 50
Ω,
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
I
(BO)
V
T
I
H
dv/dt
I
D
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
dv/dt = ±250 V/ms,
R
SOURCE
= 300
Ω
±0.15
±0.15
±5
±10
V
d
= 1 Vrms, V
D
= 0,
‘4072 - ‘4082
‘4125 - ‘4180
C
off
Off-state capacitance
‘4240 - ‘4380
f = 100 kHz,
V
d
= 1 Vrms, V
D
= -50 V
‘4072 - ‘4082
‘4125 - ‘4180
‘4240 - ‘4380
63
43
44
25
15
11
108
74
74
40
25
20
pF
I
T
= ±5 A, t
W
= 100 µs
I
T
= ±5 A, di/dt = +/-30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
V
D
= ±50 V
f = 100 kHz,
MIN
TYP
MAX
±10
±72
±82
±125
±150
±180
±240
±260
±290
±320
±380
±86
±96
±143
±168
±198
±267
±287
±317
±347
±407
±0.6
±3
A
V
A
kV/µs
µA
V
V
UNIT
µA
thermal characteristics
PARAMETER
R
θJA
Junction to free air thermal resistance
TEST CONDITIONS
EIA/JESD51-3 PCB mounted in an EIA/
JESD51-2 enclosure
MIN
TYP
MAX
120
UNIT
°C/W
PRODUCT
INFORMATION
3
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