欢迎访问ic37.com |
会员登录 免费注册
发布采购

TISP4200H4BJ 参数 Datasheet PDF下载

TISP4200H4BJ图片预览
型号: TISP4200H4BJ
PDF下载: 下载PDF文件 查看货源
内容描述: 双向晶闸管过电压保护 [BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS]
分类和应用: 光电二极管
文件页数/大小: 14 页 / 291 K
品牌: POINN [ POWER INNOVATIONS LTD ]
 浏览型号TISP4200H4BJ的Datasheet PDF文件第2页浏览型号TISP4200H4BJ的Datasheet PDF文件第3页浏览型号TISP4200H4BJ的Datasheet PDF文件第4页浏览型号TISP4200H4BJ的Datasheet PDF文件第5页浏览型号TISP4200H4BJ的Datasheet PDF文件第6页浏览型号TISP4200H4BJ的Datasheet PDF文件第7页浏览型号TISP4200H4BJ的Datasheet PDF文件第8页浏览型号TISP4200H4BJ的Datasheet PDF文件第9页  
TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Copyright © 1999, Power Innovations Limited, UK
NOVEMBER 1997 - REVISED MARCH 1999
HIGH HOLDING CURRENT 100 A 10/1000 OVERVOLTAGE PROTECTORS
q
q
q
8 kV 10/700, 200 A 5/310 ITU-T K20/21 rating
High Holding Current . . . . . . . . . 225 mA min.
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
V
DRM
DEVICE
‘4165
‘4180
‘4200
‘4265
‘4300
‘4360
V
135
145
155
200
230
270
V
(BO)
V
165
180
200
265
300
360
SMBJ PACKAGE
(TOP VIEW)
R(B)
1
2
T(A)
MDXXBG
MINIMUM MAXIMUM
device symbol
T
SD4XAA
R
q
Rated for International Surge Wave Shapes
WAVE SHAPE
2/10 µs
8/20 µs
10/160 µs
10/700 µs
10/560 µs
10/1000 µs
STANDARD
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K20/21
FCC Part 68
GR-1089-CORE
I
TSP
A
500
300
250
200
160
100
Terminals T and R correspond to the
alternative line designators of A and B
q
Low Differential Capacitance . . . 39 pF max.
description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by
a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A
single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication
equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices can
be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup
as the diverted current subsides.
This TISP4xxxH4BJ range consists of six voltage variants to meet various maximum system voltage levels
(135 V to 270 V). They are guaranteed to voltage limit and withstand the listed international lightning surges
in both polarities. These high (H) current protection devices are in a plastic package SMBJ (JEDEC DO-
214AA with J-bend leads) and supplied in embossed carrier reel pack. For alternative voltage and holding
current values, consult the factory. For lower rated impulse currents in the SMB package, the 50 A 10/1000
TISP4xxxM3BJ series is available.
PRODUCT
INFORMATION
1
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.