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TISP4220H3LM 参数 Datasheet PDF下载

TISP4220H3LM图片预览
型号: TISP4220H3LM
PDF下载: 下载PDF文件 查看货源
内容描述: 双向晶闸管过电压保护 [BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS]
分类和应用:
文件页数/大小: 16 页 / 350 K
品牌: POINN [ POWER INNOVATIONS LTD ]
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TISP4070H3LM THRU TISP4095H3LM, TISP4125H3LM THRU TISP4220H3LM,
TISP4240H3LM THRU TISP4400H3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED APRIL 1999
description (continued)
This TISP4xxxH3LM range consists of thirteen voltage variants to meet various maximum system voltage
levels (58 V to 300 V). They are guaranteed to voltage limit and withstand the listed international lightning
surges in both polarities. These protection devices are supplied in a DO-92 (LM) cylindrical plastic package.
The TISP4xxxH3LM is a straight lead DO-92 supplied in bulk pack and on tape and reeled. The
TISP4xxxH3LMF is a formed lead DO-92 supplied only on tape and reeled.
absolute maximum ratings, T
A
= 25°C (unless otherwise noted)
RATING
‘4070
‘4080
‘4095
‘4125
‘4145
‘4165
Repetitive peak off-state voltage, (see Note 1)
‘4180
‘4220
‘4240
‘4260
‘4300
‘4350
‘4400
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current)
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
5/200 µs (VDE 0433, 10/700 µs voltage wave shape)
0.2/310 µs (I 31-24, 0.5/700 µs voltage wave shape)
5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape)
5/310 µs (FTZ R12, 10/700 µs voltage wave shape)
5/320 µs (FCC Part 68, 9/720 µs voltage wave shape)
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current,
Junction temperature
Storage temperature range
NOTES: 1.
2.
3.
4.
5.
Exponential current ramp, Maximum ramp value < 100 A
di
T
/dt
T
J
T
stg
I
TSM
55
60
2.3
400
-40 to +150
-65 to +150
A/µs
°C
°C
A
I
TSP
500
300
250
220
200
200
200
200
160
100
A
V
DRM
SYMBOL
VALUE
± 58
± 65
± 75
±100
±120
±135
±145
±160
±180
±200
±230
±275
±300
V
UNIT
See Applications Information and Figure 10 for voltage values at lower temperatures.
Initially the TISP4xxxH3LM must be in thermal equilibrium with T
J
= 25°C.
The surge may be repeated after the TISP4xxxH3LM returns to its initial conditions.
See Applications Information and Figure 11 for current ratings at other temperatures.
EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient temperatures
above 25 °C
PRODUCT
2
INFORMATION