TISP4360H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JUNE 1999
RATING AND THERMAL INFORMATION
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
I
TSM(t)
- Non-Repetitive Peak On-State Current - A
30
20
15
10
9
8
7
6
5
4
3
2
1.5
0·1
1
10
100
1000
TI4HAC
MAXIMUM OVERLOAD ON-STATE CURRENT
vs
CURRENT DURATION
70
60
50
40
30
25
20
15
10
8
7
6
5
4
3
2.5
2
0·01
UL 1950 600 V rms
TESTS (1, 2 & 5)
TISP4360H3BJ I
T(OV)M
TI4HAJ
V
GEN
= 600 Vrms, 50/60 Hz
R
GEN
= 1.4*V
GEN
/I
TSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
T
A
= 25 °C
I - RMS Current - A
V
GEN
= 600 Vrms, 50/60 Hz
R
GEN
= V
GEN
/I
T(OV)M
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
T
A
= 25 °C
0·1
t - Current Duration - s
1
10
t - Current Duration - s
100
1000
Figure 7.
V
DRM
DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
1.00
0.99
0.98
Derating Factor
0.97
0.96
0.95
0.94
0.93
-40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25
T
AMIN
- Minimum Ambient Temperature - °C
Figure 8.
IMPULSE RATING
vs
AMBIENT TEMPERATURE
700
600
500
400
Impulse Current - A
300
250
ITU-T 10/700
200
FCC 10/560
150
120
BELLCORE 10/1000
100
90
-40 -30 -20 -10 0
10 20 30 40 50 60 70 80
IEC 1.2/50, 8/20
BELLCORE 2/10
TI4HADA
TC4HAA
FCC 10/160
T
A
- Ambient Temperature - °C
Figure 9.
Figure 10.
PRODUCT
INFORMATION
7
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