TISPL758LF3D
INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE
PROTECTORS FOR LUCENT TECHNOLOGIES L7581/2/3 LINE CARD ACCESS SWITCHES
JANUARY 1998 - REVISED OCTOBER 1998
electrical characteristics for the T-G and R-G terminal pairs, T
J
= 25°C (unless otherwise noted)
PARAMETER
I
DRM
V
(BO)
V
(BO)
I
H
I
D
C
TG
C
RG
Repetitive peak off-
state current
Breakover voltage
TEST CONDITIONS
V
D
= ±V
DRM
, (See Note 4)
dv/dt = ±250 V/ms, R
SOURCE
= 300
Ω
R-G terminals
T-G terminals
R-G terminals
T-G terminals
-220
-130
-240
-140
+100
-150
±10
V
TG
= -5 V, (See Note 5)
V
TG
= -50 V, (See Note 5)
18
10
36
20
VALUE
MIN
TYP
MAX
±10
+130
+130
+140
+140
UNIT
µA
V
V
mA
µA
pF
pF
Impulse breakover volt- Rated impulse conditions with operational pass series
age
Holding current
Off-state current
Off-state capacitance
Off-state capacitance
resistor
di/dt = -30 mA/ms
di/dt = +30 mA/ms
0 < V
D
< ±50 V, T
J
= 85°C
f = 100 kHz,
f = 100 kHz,
V
d
= 1 V rms
V
d
= 1 V rms
NOTES: 4. Positive and negative values of V
DRM
are not equal. See ratings table
5. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
thermal characteristics
PARAMETER
R
θ
JA
Junction to free air thermal resistance
MIN
TYP
MAX
160
UNIT
°C/W
PRODUCT
INFORMATION
3
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