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F1002 参数 Datasheet PDF下载

F1002图片预览
型号: F1002
PDF下载: 下载PDF文件 查看货源
内容描述: PATENTED金金属化的硅栅增强型RF功率VDMOS晶体管 [PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 40 K
品牌: POLYFET [ POLYFET RF DEVICES ]
 浏览型号F1002的Datasheet PDF文件第1页  
F1002
POUT VS PIN GRAPH
F1002 POUT vs PIN
60
CAPACITANCE VS VOLTAGE
F1B 2 DICE CAPACITANCE
18
17
16
Idq= 0.4A F=175 Mhz VDS = 28V
1000
50
40
15
14
13
EFFICIENCY = 75%
12
11
10
0
0.5
1
1.5
2
2.5
3
3.5
100
Coss
30
Ciss
20
10
Crss
10
0
PIN IN WATTS
POUT
GAIN
1
0
5
10
15
VDS IN VOLTS
20
25
30
IV CURVE
F1B 2 DICE IV CURVE
12
ID AND GM VS VGS
F1B 2 DIE GM & ID vs VGS
100
10
8
10
6
Id
4
1
2
0
0
2
4
6
8
10
Vds in Volts
Gm
12
14
16
18
20
0.1
0
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
Vg = 12V
2
4
6
8
10
12
14
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com