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LX803 参数 Datasheet PDF下载

LX803图片预览
型号: LX803
PDF下载: 下载PDF文件 查看货源
内容描述: 硅栅增强型RF功率LDMOS晶体管 [SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 56 K
品牌: POLYFET [ POLYFET RF DEVICES ]
 浏览型号LX803的Datasheet PDF文件第2页  
polyfet rf devices
General Description
LX803
Silicon VDMOS and LDMOS
transistors designed specifically
SILICON GATE ENHANCEMENT MODE
for broadband RF applications.
RF POWER LDMOS TRANSISTOR
Suitable for Military Radios,
Cellular and Paging Amplifier Base
45 Watts Single Ended
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
Package Style LX2
TM
"Polyfet" process features low
feedback and output capacitances
HIGH EFFICIENCY, LINEAR,
resulting in high F
t
transistors with
HIGH GAIN, LOW NOISE
high input impedance and high
efficiency.
o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation
120 Watts
Junction to
Case Thermal
Resistance
1.25
o
C/W
Maximum
Junction
Temperature
200
o
C
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
70 V
Drain to
Source
Voltage
70 V
Gate to
Source
Voltage
20 V
-65
o
C to 150
o
C
6 A
RF CHARACTERISTICS (
SYMBOL
Gps
PARAMETER
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
MIN
11
55
TYP
45WATTS OUTPUT )
MAX
UNITS
dB
%
20:1
Relative
TEST CONDITIONS
Idq = 1.2 A, Vds = 28.0 V, F = 1000 MHz
Idq = 1.2 A, Vds = 28.0 V, F = 1000 MHz
Idq = 1.2 A, Vds = 28.0 V, F = 1000 MHz
η
VSWR
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
PARAMETER
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
1
2.4
0.35
16.5
90
3
45
MIN
65
3
1
7
TYP
MAX
UNITS
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
TEST CONDITIONS
Ids =
0.2 A,
Vgs = 0V
Vgs = 0V
Vgs = 30V
Vgs = Vds
Vds = 28.0 V,
Vds = 0 V,
Ids = 0.3 A,
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 7.5 A
Vgs = 20V, Vds = 10V
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/31/99
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com