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SD723 参数 Datasheet PDF下载

SD723图片预览
型号: SD723
PDF下载: 下载PDF文件 查看货源
内容描述: 射频功率VDMOS晶体管 [RF POWER VDMOS TRANSISTOR]
分类和应用: 晶体晶体管射频
文件页数/大小: 2 页 / 64 K
品牌: POLYFET [ POLYFET RF DEVICES ]
 浏览型号SD723的Datasheet PDF文件第2页  
polyfet rf devices
SD723
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet"
TM
process features
low feedback and output capacitances,
resulting in high F
t
transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
60.0 Watts Push - Pull
Package Style AD
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total
Device
Dissipation
270 Watts
Junction to
Case Thermal
Resistance
o
0.65 C/W
Maximum
Junction
Temperature
o
200 C
Storage
Temperature
o
o
-65 C to 150 C
DC Drain
Current
Drain to
Gate
Voltage
36 V
Drain to
Source
Voltage
36 V
Gate to
Source
Voltage
20 V
15.0 A
RF CHARACTERISTICS (
SYMBOL PARAMETER
Gps
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
MIN
13
65
TYP
60.0 WATTS OUTPUT )
MAX
UNITS TEST CONDITIONS
dB
%
20:1
Relative
Idq = 0.80 A, Vds =
Idq = 0.80 A, Vds =
12.5
V, F =
175
MHz
12.5
V, F =
175
MHz
175
MHz
η
VSWR
Idq = 0.80 A, Vds =
12.5
V, F =
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
2
3.9
0.25
28.50
135.0
10.5
165.0
MIN
36
3.0
1
5
TYP
MAX
UNITS TEST CONDITIONS
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
Ids = 60.00 mA, Vgs = 0V
Vds = 12.5 V, Vgs = 0V
Vds = 0V Vgs = 30V
Ids = 0.30 A, Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 7.50 A
Vgs = 20V, Vds = 10V
Vds = 12.5 Vgs = 0V, F = 1 MHz
Vds = 12.5 Vgs = 0V, F = 1 MHz
Vds = 12.5 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com