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SM706 参数 Datasheet PDF下载

SM706图片预览
型号: SM706
PDF下载: 下载PDF文件 查看货源
内容描述: 硅栅增强型RF功率VDMOS晶体管 [SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 39 K
品牌: POLYFET [ POLYFET RF DEVICES ]
 浏览型号SM706的Datasheet PDF文件第2页  
polyfet rf devices
SM706
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
low feedback and output capacitances
resulting in high F
t
transistors with high
input impedance and high efficiency.
TM
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
135.0 Watts Single Ended
Package Style AM
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total
Device
Dissipation
270 Watts
Junction to
Case Thermal
Resistance
o
0.65 C/W
Maximum
Junction
Temperature
o
200 C
Storage
Temperature
o
o
-65 C to 150 C
DC Drain
Current
Drain to
Gate
Voltage
70 V
Drain to
Source
Voltage
70 V
Gate to
Source
Voltage
20 V
16.0 A
RF CHARACTERISTICS ( 135.0 WATTS OUTPUT )
SYMBOL
Gps
PARAMETER
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
MIN
11
75
20:1
TYP
MAX
UNITS
dB
%
Relative
TEST CONDITIONS
Idq = 0.80 A, Vds =
28.0
V, F =
Idq = 0.80 A, Vds =
28.0
V, F =
175
MHz
175
MHz
η
VSWR
Idq = 0.80 A, Vds =
28.0
V, F =
175
MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
PARAMETER
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
1
7.2
0.16
42.00
300.0
18.0
192.0
MIN
65
6.0
1
7
TYP
MAX
UNITS
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
TEST CONDITIONS
Ids = 120.00 mA, Vgs = 0V
Vds = 28.0 V, Vgs = 0V
Vds = 0V Vgs = 30V
Ids = 0.60 A, Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids =
15.00 A
Vgs = 20V, Vds = 10V
Vds = 28.0 Vgs = 0V, F = 1 MHz
Vds = 28.0 Vgs = 0V, F = 1 MHz
Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 01/28/2002
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com