AR1101 RECTIFIER DIODE
FINAL SPECIFICATION
ago 02 - ISSUE : 05
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
FORWARD CHARACTERISTIC
Tj = 175 °C
SURGE CHARACTERISTIC
Tj = 175 °C
7000
6000
5000
ITSM [kA]
0.6
1.1
Forward Voltage [V]
1.6
4000
3000
2000
1000
0
30
25
20
15
10
5
0
1
10
n° cycles
100
Forward Current [A]
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
40.0
35.0
30.0
Zth j-h [°C/kW]
25.0
20.0
15.0
10.0
5.0
0.0
0.001
0.01
0.1
t[s]
1
10
100
Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement POSEICO reserves the right to change any
data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
POSEICO [ POWER SEMICONDUCTORS ]
