POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. +39 010 6556234 - Fax +39 010 6557519
Sales Office:
Tel. +39 010 6556775 - Fax +39 010 6442510
FAST RECOVERY DIODE
FOR IGBT,IEGT,GCT APPLICATIONS
SNUBBERLESS OPERATION
LOW LOSSES SOFT RECOVERY
FINAL SPECIFICATION
mar 03 - ISSUE : 4
ARF360
Repetitive voltage up to
Mean forward current
Surge current
3300
V
290
A
5
kA
Symbol
Characteristic
Conditions
Tj
[°C]
Value
Unit
BLOCKING
V
V
I
V
RRM
RSM
RRM
DC LINK
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak reverse current
Permanent DC voltage
V=VRRM
125
125
125
125
3300
3400
50
1500
V
V
mA
V
CONDUCTING
I
I
I
F (AV)
F (AV)
FSM
Mean forward current
Mean forward current
Surge forward current
I² t
Forward voltage
Threshold voltage
Forward slope resistance
180° sin, 50 Hz, Th=55°C, double side cooled
180° sin, 50 Hz, Th=55°C, double side cooled
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
Forward current = 1200
A
125
290
300
4.5
101 x1E3
125
125
125
6.78
1.86
4.100
A
A
kA
A²s
V
V
mohm
I² t
V
V
r
FM
F(TO)
F
SWITCHING
Q rr
I rr
t rr
Q rr
I rr
s
E
V
OFF
FR
Reverse recovery charge
Peak reverse recovery current
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Softness (s-factor), min
Turn off energy dissipation
Peak forward recovery
IF=
VR =
IF=
di/dt=
VR =
500 A
50 V
500 A
1000 A/µs
1800 V
di/dt=
100 A/µs
125
125
55
85
µC
A
µs
226
125
545
µC
A
J
di/dt=
400 A/µs
125
V
MOUNTING
R
th(j-c)
R
th(c-h)
T
F
j
Thermal impedance
Thermal impedance
Operating junction temperature
Mounting force
Mass
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
50
15
-30 / 125
8.0 / 9.0
85
°C/kW
°C/kW
°C
kN
g
ORDERING INFORMATION : ARF360 S 33
standard specification
VRRM/100
POSEICO [ POWER SEMICONDUCTORS ]
