ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
FAST RECOVERY DIODE
ARF526
Repetitive voltage up to
Mean forward current
Surge current
1600
V
1345
A
20
kA
TARGET SPECIFICATION
feb 97 - ISSUE : 02
Symbol
Characteristic
Conditions
Tj
[°C]
Value
Unit
BLOCKING
V
RRM
V
RSM
I
RRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak reverse current
V=VRRM
125
125
125
1600
1700
50
V
V
mA
CONDUCTING
I
I
I
F (AV)
Mean forward current
Mean forward current
Surge forward current
I² t
Forward voltage
Threshold voltage
Forward slope resistance
180° sin ,50 Hz, Th=55°C, double side cooled
180° square,50 Hz,Th=55°C,double side cooled
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
125
1345
1350
20
2000 x1E3
A
A
kA
A²s
V
V
mohm
F (AV)
FSM
I² t
V
FM
V
F(TO)
r
F
Forward current =
2000 A
125
125
125
1.6
1.00
0.300
SWITCHING
t rr
Q rr
I rr
s
V
FR
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Softness (s-factor), min
Peak forward recovery
di/dt=
100 A/µs
125
I F = 1000 A
di/dt=
VR =
100 A/µs
50 V
145
0.5
15
V
A
125
3.5
250
µs
µC
MOUNTING
R
th(j-h)
T
F
j
Thermal impedance
Operating junction temperature
Mounting force
Mass
Junction to heatsink, double side cooled
26
-30 / 125
18.0 / 20.0
500
°C/kW
°C
kN
g
ORDERING INFORMATION : ARF526 S 16
standard specification
VRRM/100
POSEICO [ POWER SEMICONDUCTORS ]
