ARF565 FAST RECOVERY DIODE
FINAL SPECIFICATION
nov 97 - ISSUE : 02
ANSALDO
SWITCHING CHARACTERISTICS
FORWARD RECOVERY VOLTAGE
40
35
Tj = 125 °C
30
25
VFR [V]
20
15
10
V
F
5
0
0
200
400
600
di/dt [A/µs]
800
1000
1200
Tj = 25 °C
I
F
V
FR
REVERSE RECOVERY CHARGE
Tj = 125 °C
2000
2000 A
REVERSE RECOVERY CURRENT
Tj = 125 °C
1100
2000 A
1000 A
1800
1600
1400
1200
Qrr [µC]
1000
800
600
400
200
0
0
100
200
di/dt [A/µs]
300
1000
900
800
1000 A
500 A
500 A
700
Irr [A]
400
600
500
400
300
200
100
0
0
100
200
di/dt [A/µs]
300
400
ta = Irr / (di/dt)
tb = trr - ta
I
F
d i/d t
ta
tb
Softness (s factor) s = tb / ta
Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 )
Irr
Vr
POSEICO [ POWER SEMICONDUCTORS ]
