POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. +39 010 6556234 - Fax +39 010 6557519
Sales Office:
Tel. +39 010 6556775 - Fax +39 010 6442510
FAST RECOVERY DIODE
FOR IGBT,IEGT,GCT APPLICATIONS
SNUBBERLESS OPERATION
LOW LOSSES SOFT RECOVERY
TARGET SPECIFICATION
gen 03 - ISSUE : 1
ARF664
Repetitive voltage up to
Mean forward current
Surge current
3300
V
1000
A
18
kA
Symbol
Characteristic
Conditions
Tj
[°C]
Value
Unit
BLOCKING
V
V
I
V
RRM
RSM
RRM
DC LINK
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak reverse current
Permanent DC voltage
V=VRRM
125
125
125
125
3300
3400
V
V
mA
1500
V
CONDUCTING
I
I
I
F (AV)
F (AV)
FSM
Mean forward current
Mean forward current
Surge forward current
I² t
Forward voltage
Threshold voltage
Forward slope resistance
180° sin ,50 Hz, Th=55°C, double side cooled
180° square,50 Hz,Th=55°C,double side cooled
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
Forward current = 1570
A
125
1000
1025
18
1620 x1E3
25
125
125
3.55
1.80
0.70
A
A
kA
A²s
V
V
mohm
I² t
V
V
r
FM
F(TO)
F
SWITCHING
Q rr
I rr
t rr
Q rr
I rr
s
E
V
OFF
FR
Reverse recovery charge
Peak reverse recovery current
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Softness (s-factor), min
Turn off energy dissipation
Peak forward recovery
IF=
VR =
IF=
di/dt=
VR =
1000 A
100 V
1100 A
500 A/µs
V
di/dt=
250 A/µs
125
125
µC
A
µs
2000
µC
A
125
1100
J
di/dt=
500 A/µs
125
V
MOUNTING
R
th(j-h)
R
th(c-h)
T
F
j
Thermal impedance
Thermal impedance
Operating junction temperature
Mounting force
Mass
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
21
6
00 /
125
°C/kW
°C/kW
°C
kN
g
22.0 / 24.5
520
ORDERING INFORMATION : ARF664 S 33
standard specification
VRRM/100
POSEICO [ POWER SEMICONDUCTORS ]
