POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. +39 010 6556234 - Fax +39 010 6557519
Sales Office:
Tel. +39 010 6556775 - Fax +39 010 6442510
FAST RECOVERY DIODE
FOR IGBT,IEGT,GCT APPLICATIONS
SNUBBERLESS OPERATION
LOW LOSSES SOFT RECOVERY
TARGET SPECIFICATION
dic 02 - ISSUE : 01
ARF670
Repetitive voltage up to
Mean forward current
Surge current
4500
V
1315
A
15
kA
Symbol
Characteristic
Conditions
Tj
[°C]
Value
Unit
BLOCKING
V
V
I
V
RRM
RSM
RRM
DC LINK
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak reverse current
Permanent DC voltage
V=VRRM
140
140
140
140
4500
4600
150
2500
V
V
mA
V
CONDUCTING
I
I
I
F (AV)
F (AV)
FSM
Mean forward current
Mean forward current
Surge forward current
I² t
Forward voltage
Threshold voltage
Forward slope resistance
180° sin ,50 Hz, Th=55°C, double side cooled
180° square,50 Hz,Th=55°C,double side cooled
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
Forward current = 1570
A
140
1315
1370
15
1125 x1E3
25
140
140
2.70
1.50
0.60
A
A
kA
A²s
V
V
mohm
I² t
V
V
r
FM
F(TO)
F
SWITCHING
Q rr
I rr
Q rr
I rr
V pk
s
E
V
OFF
FR
Reverse recovery charge
Peak reverse recovery current
Reverse recovery charge
Peak reverse recovery current
Peak reverse recovery voltage
Softness (s-factor), min
Turn off energy dissipation
Peak forward recovery voltage
IF=
VR =
IF=
VR =
L=
1000 A
100 V
1000 A
350 V
1 µH
di/dt=
250 A/µs
140
1500
650
µC
A
µC
A
V
di/dt=
±10%
±10%
500
A/µs
140
2050
1050
1400
0.5
0.8
J
V
di/dt=
500 A/µs
25
35
MOUNTING
R
th(j-h)
R
th(c-h)
T
F
j
Thermal impedance
Thermal impedance
Operating junction temperature
Mounting force
Mass
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
18
6
-40 / 140
22.0 / 24.5
300
°C/kW
°C/kW
°C
kN
g
ORDERING INFORMATION : ARF670 S 45
standard specification
VRRM/100
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