PO3B341A
High-Bandwidth 3-Port, 4:1 Mux/DeMux Video Switch
High Bandwidth Potato Chip
12/26/08
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Note:
Stresses greater than those listed under
MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating
only and functional operation of the device at
these or any other conditions above those
indicated in the operational sections of this
specification
is not implied. Exposure to
absolute maximum rating conditions for
extended periods may affect reliability.
Storage Temperature ................................................ –65°C to +150°C
Ambient Temperature with Power Applied ............... –40°C to +85°C
Supply Voltage to Ground Potential ........................... –0.5V to +4.6V
DC Input Voltage ........................................................ –0.5V to +Vcc
DC Output Current................................................................... 120mA
Power Dissipation ....................................................................... 0.5W
(Over the Operating Range, T
A
= –40°C to +85°C, V
CC
= 3.3V ±10%)
Parameters
V
IH
V
IL
I
IH
I
IL
I
OZH
R
ON
Description
Input HIGH Voltage
Input LOW Voltage
Input HIGH Current
Input LOW Current
DC Electrical Characteristics, 3.3V Supply
Test Conditions
Guaranteed Logic HIGH Level
Guaranteed Logic LOW Level
V
CC
= Max., V
IN
= V
CC
V
CC
= Max., V
IN
= GND
V
CC
= Min., V
IN
= 0.0V,
Switch On-Resistance
I
ON
= -48 mA or -64mA
V
CC
= Min., V
IN
= V
CC
, I
ON
= -15 mA
Min.
2.0
0.8
±1
±1
±1
16
14
20
18
Ω
µA
Typ.
Max.
Units
V
High Impedance Output Current
0
≤
Y, In
≤
V
CC
(Over Operating Range, T
A
= –40°C to +85°C, V
CC
= 2.5V ± 10%)
Parameters
V
IH
V
IL
I
IH
I
IL
I
OZH
R
ON
Description
Input HIGH Voltage
Inout LOW Voltage
Input HIGH Current
Input LOW Current
High Impedance Current
Switch On Resistance
DC Electrical Characteristics, 2.5V Supply
Test Conditions
Guaranteed Logic HIGH Level
Guaranteed Logic LOW Level
V
CC
= Max., V
IN
= V
CC
V
CC
= Max., V
IN
= GND
0
≤
Y,
In
≤
V
CC
V
CC
= Min., V
IN
= 0.0V,
I
ON
= –48mA
V
CC
= Min., V
IN
= 2.25V,
I
ON
= -15mA
20
20
Min.
1.8
–0.3
Typ.
Max.
V
CC
+ 0.3
0.8
±1
±1
±1
24
Ω
24
µA
Units
V
2
Copyright
© Potato Semiconductor Corporation
POTATO [ POTATO SEMICONDUCTOR CORPORATION ]
