MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR3AS
OUTLINE DRAWING
Dimensions
in mm
6.5
4
1.5±0.2
5.0±0.2
0.5±0.1
∗
TYPE
NAME
VOLTAGE
CLASS
5.5±0.2
0.9 MAX
1.0
2.3
2.3 MIN
1.0 MAX
10 MAX
0.5±0.2
0.8
2.3
2.3
∗
Measurement point of
case temperature
1
2
3
1
2
33
4
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
T
2
TERMINAL
24
• I
T (RMS)
........................................................................ 3A
• V
DRM
..............................................................400V/600V
• I
FGT
!
, I
RGT
!
, I
RGT
#
......................... 15mA (10mA)
V2
APPLICATION
Hybrid IC, solid state relay, switching mode power supply, light dimmer,
electric fan, electric blankets,
control of household equipment such as washing machine,
other general purpose control applications
1
MP-3
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
V1
Non-repetitive peak off-state
voltage
V1
Voltage class
8
400
500
12
600
720
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
—
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Typical value
Conditions
Commercial frequency, sine full wave 360° conduction, T
c
=108°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ratings
3
30
3.7
3
0.3
6
0.3
–40 ~ +125
–40 ~ +125
0.26
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V1.
Gate open.
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
