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CD421290 参数 Datasheet PDF下载

CD421290图片预览
型号: CD421290
PDF下载: 下载PDF文件 查看货源
内容描述: POW -R - BLOK双SCR /二极管隔离模块90安培/高达1600伏 [POW-R-BLOK Dual SCR/Diode Isolated Module 90 Amperes / Up to 1600 Volts]
分类和应用: 二极管
文件页数/大小: 4 页 / 105 K
品牌: POWEREX [ POWEREX POWER SEMICONDUCTORS ]
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CD42__90
CD47__90
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 (724) 925-7272
POW-R-BLOK
Dual SCR/Diode Isolated Module
90 Amperes / Up to 1600 Volts
TM
Electrical Characteristics, T
J
=25°C unless otherwise specified
Characteristics
Repetitive Peak Forward Leakage Current
Repetitive Peak Reverse Leakage Current
Peak On-State Voltage
Threshold Voltage, Low-level
Slope Resistance, Low-level
Threshold Voltage, High-level
Slope Resistance, High-level
V
TM
Coefficients, Full Range
Symbol
I
DRM
I
RRM
V
TM
/ V
FM
V
(TO)1
r
T1
V
(TO)2
r
T2
Test Conditions
Up to 1600V, T
J
=125°C
Up to 1600V, T
J
=125°C
I
TM /
I
FM
=300A
T
J
= 125°C, I = 16.7% x
π
I
T(AV)
to
π
I
T(AV)
T
J
= 125°C, I =
π
I
T(AV)
to I
TSM
T
J
= 125°C, I = 15% x I
T(AV)
to I
TSM
V
TM
= A+ B Ln I +C I + D Sqrt I
Minimum dV/dt
Turn-Off Time (Typical)
dV/dt
t
off
Linear to 2/3 V
DRM
T
j
=125°C, Gate Open Circuit
T
J
= 25°C, I
T
= 2A
V
r
= 50V, -dI/dt=10 A/µs
Re-Applied dV/dt = 200 V/µs,
Linear to 900 V
T
j
= -40°C, V
D
=6V, Resistive Load
T
j
= 25°C, V
D
=6V, Resistive Load
T
j
=125°C, V
D
=6V, Resistive Load
T
j
= -40°C, V
D
=6V, Resistive Load
T
j
= 25°C, V
D
=6V, Resistive Load
T
j
=125°C, V
D
=6V, Resistive Load
T
j
=125°C, V
D
=V
DRM
T
j
=125°C, V
D
=V
DRM
V
D
=6V, Resistive Load, Gate Open
V
D
=6V, Resistive Load
A=
B=
C=
D=
500
40 - 100
(Typical)
Min.
Max.
15
15
1.58
0.80
2.40
0.85
2.25
0.7160
2.17E-02
2.20E-03
1.58E-03
V/µs
µs
Units
mA
mA
V
V
m
V
m
Gate Trigger Current
I
GT
270
150
80
4.0
2.5
1.7
0.25
6
200
400
mA
mA
mA
Volts
Volts
Volts
Volts
mA
mA
mA
Gate Trigger Voltage
V
GT
Non-Triggering Gate Voltage
Non-Triggering Gate Current
Holding Current
Latching Current
V
GDM
I
GDM
I
H
I
L
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case
DC Operation
Thermal Impedance Coefficients
Symbol
R
ΘJ-C
Z
Θ
J-C
Per Module, both conducting
Per Junction, both conducting
Z
Θ
J-C
= K
1
(1-exp(-t/
τ
1
))
+ K
2
(1-exp(-t/
τ
2
))
+ K
3
(1-exp(-t/
τ
3
))
Thermal Resistance, Case to Sink Lubricated
R
ΘC-S
+ K
4
(1-exp(-t/
τ
4
))
Per Module
K
1
= 6.48 E-3
K
2
= 6.02 E-2
K
3
= 1.64 E-1
K
4
= 3.94 E-2
Max.
0.135
0.270
τ
1
= 5.80 E-4
τ
2
= 1.70 E-2
τ
3
= 9.54 E-2
τ
4
= 3.53 E-1
0.1
°C/W
Units
°C/W
°C/W
Revision Date: 11/1/2001